參數(shù)資料
型號(hào)： S29NS032JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 73/85頁
文件大?。?/td> 799K
代理商： S29NS032JPLBFW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
69
D a t a S h e e t
Physical Dimensions
S29NS128J
VDC048—48-Ball Very Thin Fine-Pitch Ball Grid Array ( FBGA) 10 x 11 mm
Package
D
Note:
For reference only. BSC is an ANSI standard for Basic Space Centering.
PACKAGE
VDC 048
JEDEC
N/A
9.95 mm x 10.95 mm NOM
PACKAGE
S
YMBOL
MIN
NOM
MAX
NOTE
A
0.86
---
1.00
OVERALL THICKNE
SS
A1
0.20
---
---
BALL HEIGHT
A2
0.66
0.71
0.76
BODY THICKNE
SS
D
9.85
9.95
10.05
BODY
S
IZE
E
10.85
10.95
11.05
BODY
S
IZE
D1
4.50
BALL FOOTPRINT
E1
1.50
BALL FOOTPRINT
MD
10
ROW MATRIX
S
IZE D DIRECTION
ME
4
ROW MATRIX
S
IZE E DIRECTION
N
φ
b
e
48
TOTAL BALL COUNT
0.25
0.30
0.35
BALL DIAMETER
0.50
BALL PITCH
S
D /
S
E
0.25
S
OLDER BALL PLACEMENT
3241 \ 16-038.9h.
aa
01
NOTE
S
:
1. DIMEN
S
IONING AND TOLERANCING PER A
S
ME Y14.5M-1994.
2. ALL DIMEN
S
ION
S
ARE IN MILLIMETER
S
.
3. BALL PO
S
ITION DE
S
IGNATION PER JE
S
D 95-1,
S
PP-010 (EXCEPT
A
S
NOTED).
4. e REPRE
S
ENT
S
THE
S
OLDER BALL GRID PITCH.
5.
S
YMBOL "MD" I
S
THE BALL ROW MATRIX
S
IZE IN THE
"D" DIRECTION.
S
YMBOL "ME" I
S
THE BALL COLUMN MATRIX
S
IZE IN THE
"E" DIRECTION.
N I
S
THE TOTAL NUMBER OF
S
OLDER BALL
S
.
6
DIMEN
S
ION "
b
" I
S
MEA
S
URED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
S
D AND
S
E ARE MEA
S
URED WITH RE
S
PECT TO DATUM
S
A AND B AND DEFINE THE PO
S
ITION OF THE CENTER
S
OLDER BALL IN THE OUTER ROW.
WHEN THERE I
S
AN ODD NUMBER OF
S
OLDER BALL
S
IN
THE OUTER ROW PARALLEL TO THE D OR E DIMEN
S
ION,
RE
S
PECTIVELY,
S
D OR
S
E = 0.000.
WHEN THERE I
S
AN EVEN NUMBER OF
S
OLDER BALL
S
IN
THE OUTER ROW,
S
D OR
S
E = e/2
8. NOT U
S
ED.
9. "+" INDICATE
S
THE THEORETICAL CENTER OF DEPOPULATED
BALL
S
.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LA
S
ER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEAN
S
.
INDEX MARK
A1 CORNER
NF4
NF1
NF8
1
2
4
3
5
6
8
9
7
NF2
NF3
A
B
C
D
NF7
NF5
10
NF6
A
10
E
A1 CORNER
S
E
7
E1
D1
e
1.00
1.00
7
S
D
B
6
φ
b
C
M
C
M
φ
0.05
φ
0.15
A
1.00
1.00
C
0.10
C
0.08
A
B
C
A2
S
EATING PLANE
A1
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參數(shù)描述
S29NS032JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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