參數(shù)資料
型號: S29NS032JPLBFW002
廠商: Spansion Inc.
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 110納米CMOS 1.8伏只有同時讀/寫,突發(fā)模式閃存
文件頁數(shù): 62/85頁
文件大?。?/td> 799K
代理商: S29NS032JPLBFW002
58
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
AC Characteristics
Asynchronous Read
Note:
Not 100% tested
.
Note:
RA = Read Address, RD = Read Data
.
Figure 13. Asynchronous Mode Read
Parameter
Description
0P
(66 MHz)
0L
(54 MHz)
Unit
JEDEC
Standard
t
CE
Access Time from CE# Low
Max
65
70
ns
t
ACC
Asynchronous Access Time
Max
65
70
ns
t
AVDP
AVD# Low Time
Min
11
12
ns
t
AAVDS
Address Setup Time to Rising Edge of AVD
Min
4
5
ns
t
AAVDH
Address Hold Time from Rising Edge of AVD
Min
3.7
3.7
ns
t
OE
Output Enable to Output Valid
Max
11
13.5
ns
t
OEH
Output Enable Hold Time
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
t
OEZ
Output Enable to High Z (See Note)
Max
10
ns
t
CE
WE#
Am
a
x
A16
CE#
OE#
V
a
lid RD
t
ACC
t
OEH
t
OE
A/DQ15
A/DQ0
t
OEZ
t
AAVDH
t
AVDP
t
AAVD
S
AVD#
RA
RA
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