參數(shù)資料
型號： S29NS032JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 4/85頁
文件大?。?/td> 799K
代理商： S29NS032JPLBFW002
iv
S29NS-J
S29NS-J_01_A10 March 22, 2006
D a t a S h e e t
11 mm Package ................................................................................................69
S29NS064J ............................................................................................................70
VDD044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 9.2 x
8 mm Package .................................................................................................70
S29NS032J and S29NS016J .................................................................................71
VDE044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 7.7 x
6.2 mm Package ................................................................................................71
Table 22. Daisy Chain Part for 128Mbit 110 nm Flash Products
(VDC048, 10 x 11 mm) ...................................................... 72
Table 23. VDC048 Package Information ................................ 72
Table 24. VDC048 Connections ........................................... 72
Figure 25. VDC048 Daisy Chain Layout
(Top View, Balls Facing Down) ............................................. 73
Appendix B: Daisy Chain Information . . . . . . . . .74
Table 25. Daisy Chain Part for 64Mbit 110 nm Flash Products
(VDD044, 9.2 x 8 mm) ....................................................... 74
Table 26. VDD044 Package Information ................................ 74
Table 27. VDD044 Connections ............................................ 74
Figure 26. VDD044 Daisy Chain Layout
(Top View, Balls Facing Down) ............................................ 75
Appendix C: Daisy Chain Information . . . . . . . . .76
Table 28. Daisy Chain Part for 32 and 16 Mbit 110 nm Flash Prod-
ucts (VDE044, 7.7 x 6.2 mm) .............................................. 76
Table 29. VDE044 Package Information ................................ 76
Table 30. VDE044 Connections ............................................ 76
Figure 27. VDE044 Daisy Chain Layout
(Top View, Balls Facing Down) ............................................ 77
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . .78
相關PDF資料
PDF描述
S29NS032JPLBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關代理商/技術參數(shù)
參數(shù)描述
S29NS032JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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