參數(shù)資料
型號(hào)： S29NS032JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁(yè)數(shù)： 25/85頁(yè)
文件大?。?/td> 799K
代理商： S29NS032JPLBFW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
21
D a t a S h e e t
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical
(00h = not supported)
Table 5.
Device Geometry Definition
Addresses
Data
Description
S29NS128J
S29NS064J
S29NS032J
S29NS016J
27h
0018h
0017h
0016h
0015h
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI
publication 100)
2Ah
2Bh
0000h
0000h
Max. number of bytes in multi-byte write = 2
N
(00h = not supported)
2Ch
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
00FEh
0000h
0000h
0001h
007Eh
0000h
0000h
0001h
003Eh
0000h
0000h
0001h
001Eh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0003h
0000h
0040h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
Table 6. Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Addresses
Data
Description
S29NS128J S29NS064J S29NS032J S29NS016J
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0000h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0005h
Sector Protect/Unprotect scheme
05 = 29BDS/N128 mode
4Ah
00C0h
0060h
0030h
0018h
Simultaneous Operation
Number of Sectors in all banks except boot bank
4Bh
0001h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
00B5h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Table 4.
System Interface String
(Sheet 2 of 2)
Addresses
Data
Description
S29NS128J
S29NS064J
S29NS032J
S29NS016J
相關(guān)PDF資料
PDF描述
S29NS032JPLBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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