參數(shù)資料
型號： S29NS032JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 54/85頁
文件大?。?/td> 799K
代理商： S29NS032JPLBFW002
50
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether
or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If
additional sectors are selected for erasure, the entire time-out also applies after each additional
sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.”
If the time between additional sector erase commands from the system can be assumed to be
less than t
SEA
, the system need not monitor DQ3. See also the
Sector Erase Command Sequence
section.
After the sector erase command is written, the system should read the status of DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and
then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands
(except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device
will accept additional sector erase commands. To ensure the command has been accepted, the
system software should check the status of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status check, the last command might not have
been accepted.
Table 20
shows the status of DQ3 relative to the other status bits.
Table 20. Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded
Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank.
4. The system may read either asynchronously or synchronously (burst) while in erase suspend. RDY will function ex-
actly as in non-erase-suspended mode.
Status
DQ7
(
Note 2
)
DQ6
DQ5
(
Note 1
)
DQ3
DQ2
(
Note 2
)
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
Erase
Suspend
Mode
Erase Suspend Read
(
Note 4
)
Erase Suspended
Sector
1
No toggle
0
N/A
Toggle
Non-Erase Suspended
Sector
Data
Data
Data
Data
Data
Erase Suspend Program
DQ7#
Toggle
0
N/A
N/A
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S29NS032JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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