- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365400 > S29NS032JPLBFW002 (Spansion Inc.) 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories PDF資料下載
參數(shù)資料
| 型號： | S29NS032JPLBFW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 23/85頁 |
| 文件大小： | 799K |
| 代理商： | S29NS032JPLBFW002 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁
March 22, 2006 S29NS-J_00_A10
S29NS-J
19
D a t a S h e e t
The sector lock/unlock command sequence disables or re-enables both program and erase
operations in any sector.
When WP# is at V
IL
,
—SA257 and SA258 are locked (S29NS128J)
—SA129 and SA130 are locked (S29NS064J)
—SA65 and SA66 are locked (S29NS032J)
—SA33 and SA34 are locked (S29NS016J)
When A
cc
is at V
IL
, all sectors are locked.
WP# Boot Sector Protection
The WP# signal will be latched at a specific time in the embedded program or erase sequence. To
prevent a write to the top two sectors, WP# must be asserted (WP#= V
IL
) on the last write cycle
of the embedded sequence (i.e., 4th write cycle in embedded program, 6th write cycle in embed-
ded erase).
If using the Unlock Bypass feature: on the 2nd program cycle, after the Unlock Bypass command
is written, the WP# signal must be asserted on the 2nd cycle.
If selecting multiple sectors for erasure: The WP# protection status is latched only on the 6th
write cycle of the embedded sector erase command sequence when the first sector is selected. If
additional sectors are selected for erasure, they are subject to the WP# status that was latched
on the 6th write cycle of the command sequence.
The following hardware data protection measures prevent accidental erasure or programming,
which might otherwise be caused by spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
W rite I nhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This protects data during
V
CC
power-up and power-down. The command register and all internal program/erase circuits are
disabled, and the device resets to reading array data. Subsequent writes are ignored until V
CC
is
greater than V
LKO
. The system must provide the proper signals to the control inputs to prevent
unintentional writes when V
CC
is greater than V
LKO
.
W rite Pulse “ Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical I nhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate
a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS032JPLBFW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032JPLBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。