參數(shù)資料
型號： S29NS032JPLBFW002
廠商： Spansion Inc.
英文描述： 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述： 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 37/85頁
文件大小： 799K
代理商： S29NS032JPLBFW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
33
D a t a S h e e t
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations.
Table 18
defines the valid register command sequences. Writing
incorrect
ad-
dress and data values
or writing them in the
improper sequence
resets the device to reading
array data.
All addresses are latched on the rising edge of AVD#. All data is latched on the rising edge of
WE#. Refer to the
AC Characteristics
section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data in asynchronous mode. Each bank is ready to read array data after com-
pleting an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-
suspend-read mode, after which the system can read data from any non-erase-suspended sector.
After completing a programming operation in the Erase Suspend mode, the system may once
again read array data with the same exception. See the
Erase Suspend/Erase Resume Commands
section for more information.
SA8
32 Kwords
040000h–047FFFh
SA9
32 Kwords
048000h–04FFFFh
SA10
32 Kwords
050000h–057FFFh
SA11
32 Kwords
058000h–05FFFFh
SA12
32 Kwords
060000h–067FFFh
SA13
32 Kwords
068000h–06FFFFh
SA14
32 Kwords
070000h–077FFFh
SA15
32 Kwords
078000h–07FFFFh
SA16
32 Kwords
080000h–087FFFh
SA17
32 Kwords
088000h–08FFFFh
SA18
32 Kwords
090000h–097FFFh
SA19
32 Kwords
098000h–09FFFFh
SA20
32 Kwords
0A0000h–0A7FFFh
SA21
32 Kwords
0A8000h–0AFFFFh
SA22
32 Kwords
0B0000h–0B7FFFh
SA23
32 Kwords
0B8000h–0BFFFFh
SA24
32 Kwords
0C0000h–0C7FFFh
SA25
32 Kwords
0C8000h–0CFFFFh
SA26
32 Kwords
0D0000h–0D7FFFh
SA27
32 Kwords
0D8000h–0DFFFFh
SA28
32 Kwords
0E0000h–0E7FFFh
SA29
32 Kwords
0E8000h–0EFFFFh
SA30
32 Kwords
0F0000h–0F7FFFh
SA31
8 Kwords
0F8000h–0F9FFFh
SA32
8 Kwords
0FA000h–0FBFFFh
SA33
8 Kwords
0FC000h–0FDFFFh
SA34
8 Kwords
0FE000h–0FFFFFh
Table 10. Sector Address Table, S29NS016J (Sheet 2 of 2)
Sector
Sector Size
Address Range
相關(guān)PDF資料
PDF描述
S29NS032JPLBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS032JPLBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032JPLBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS064J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*