參數(shù)資料
型號(hào): S29NS032JPLBFW002
廠商: Spansion Inc.
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 110納米CMOS 1.8伏只有同時(shí)讀/寫(xiě),突發(fā)模式閃存
文件頁(yè)數(shù): 57/85頁(yè)
文件大?。?/td> 799K
代理商: S29NS032JPLBFW002
March 22, 2006 S29NS-J_00_A10
S29NS-J
53
D a t a S h e e t
Test Conditions
Table 21. Test Specifications
Key to Switching Waveforms
Switching Waveforms
Test Condition
All Speeds
Unit
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–V
CC
V
Input timing measurement reference levels
V
CC
/2
V
Output timing measurement reference levels
V
CC
/2
V
C
L
Device
Under
Test
Figure 7. Test Setup
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
V
CC
0.0 V
O
u
tp
u
t
Me
asu
rement Level
Inp
u
t
V
CC
/2
V
CC
/2
Figure 8. Input Waveforms and Measurement Levels
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