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參數(shù)資料
| 型號(hào)： | S29NS032JPLBFW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 56/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBFW002 |
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52
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
DC Characteristics
CMOS Compatible
Notes:
1.
Maximum I
specifications are tested with V
= V
max.
2.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
3.
I
CC
active while Embedded Erase or Embedded Program is in progress.
4.
Device enters automatic sleep mode when addresses are stable for t
ACC
+ 60 ns. Typical sleep mode current is equal to I
CC3
.
5.
Specifications assume 8 I/Os switching and continuous burst length.
6.
Not 100% tested. A
cc
is not a power supply pin.
Parameter
Description
Test Conditions (
Note 1
)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC max
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
± 1
μA
I
LO
Output Leakage Current
V
CC
Active Burst Read Current
(
Note 5
)
± 1
μA
I
CCB
CE# = V
IL
, OE# = V
IL
25
30
mA
I
CC1
V
CC
Active Asynchronous Read
Current (
Note 2
)
CE# = V
IL
, OE# = V
IH
5 MHz
12
16
mA
1 MHz
3.5
5
mA
I
CC2
V
CC
Active Write Current (
Note 3
)
V
CC
Standby Current (
Note 4
)
V
CC
Reset Current
V
CC
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IH
, A
cc
= V
IH
CE# = V
IH
, RESET# = V
IH
RESET# = V
IL,
CLK = V
IL
15
40
mA
I
CC3
9
40
μA
I
CC4
9
40
μA
I
CC5
CE# = V
IL
, OE# = V
IL
40
60
mA
I
PPW
I
CCW
I
PPE
I
CCE
V
IL
Accelerated Program Current
(
Note 6
)
A
cc
= 12 V
7
15
mA
5
10
Accelerated Erase Current
(
Note 6
)
A
cc
= 12 V
7
15
mA
5
10
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
CC
– 0.4
V
CC
+ 0.2
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
I
OH
= –100 μA, V
CC
= V
CC
min
0.1
V
V
OH
Output High Voltage
V
CC
– 0.1
V
V
ID
Voltage for Accelerated Program
11.5
12.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
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