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參數(shù)資料
| 型號： | S29NS032JPLBFW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 14/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBFW002 |
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10
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
Input/Output Descriptions
A22–A16
A21–A16
A20–A16
A19–A16
A/DQ15–
A/DQ0
=
=
=
=
Address Inputs, S29NS128J
Address Inputs, S29NS064J
Address Inputs, S29NS032J
Address Inputs, S29NS016J
=
Multiplexed Address/Data input/output
CE#
=
Chip Enable Input. Asynchronous relative to CLK for the
Burst mode.
Output Enable Input. Asynchronous relative to CLK for the
Burst mode.
Write Enable Input.
Device Power Supply (1.7 V–1.95 V).
Ground
No Connect; not connected internally
Ready output; indicates the status of the Burst read. V
OL
=
data invalid.
V
OH
= data valid.
The first rising edge of CLK in conjunction with AVD# low
latches address input and activates burst mode operation.
After the initial word is output, subsequent rising edges of
CLK increment the internal address counter. CLK should
remain low during asynchronous access.
Address Valid input. Indicates to device that the valid
address is present on the address inputs (address bits A15–
A0 are multiplexed, address bits A22–A16 are address
only).
V
IL
= for asynchronous mode, indicates valid address; for
burst mode, causes starting address to be latched on rising
edge of CLK.
V
IH
= device ignores address inputs
Hardware reset input. V
IL
= device resets and returns to
reading array data
Hardware write protect input. V
IL
= disables writes to
SA257–258 (S29NS128J), SA129–130 (S29NS064J),
SA65–66 (S29NS032J), or SA33-34 (S29NS016J). Should
be at V
IH
for all other conditions.
At 12 V, accelerates programming; automatically places
device in unlock bypass mode. At V
IL
, disables program and
erase functions. Should be at V
IH
for all other conditions.
OE#
=
WE#
V
CC
GND
NC
RDY
=
=
=
=
=
CLK
=
AVD#
=
RESET#
=
WP#
=
A
cc
=
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| S29NS032JPLBJW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032JPLBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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