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參數(shù)資料
| 型號： | S29NS032JPLBFW002 |
| 廠商： | Spansion Inc. |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 110納米CMOS 1.8伏只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 46/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032JPLBFW002 |
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S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and
then read data from, program data to, any sector not selected for erasure. The system may also
lock or unlock any sector while the erase operation is suspended.
The system must not w rite
the sector lock/ unlock command to sectors selected for erasure.
The bank address is re-
quired when writing this command. This command is valid only during the sector erase operation,
including the minimum t
SEA
time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or Embedded Pro-
gram algorithm.
When the Erase Suspend command is written during the sector erase operation, the device re-
quires t
ESL
(erase suspend latency) to suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase time-out, the device immediately terminates
the time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode.
The system can read data from or program data to any sector not selected for erasure. (The de-
vice “erase suspends” all sectors selected for erasure.) The system may also lock or unlock any
sector while in the erase-suspend-read mode. Reading at any address within erase-suspended
sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer to the
Write Op-
eration Status
section for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-
read mode. The system can determine the status of the program operation using the DQ7 or DQ6
status bits, just as in the standard program operation. Refer to the
Write Operation Status
section
for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence.
Refer to the
Autoselect Functions
and
Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system must write the Erase Resume command. The
bank address of the erase-suspended bank is required when writing this command. Further writes
of the Resume command are ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS032JPLBFW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS032JPLBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032JPLBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS064J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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