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參數(shù)資料
| 型號： | S29GL128N10TAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142BEC, TSOP-56 |
| 文件頁數(shù)： | 99/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N10TAIV13 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
97
D a t a S h e e t
Advance I nformation on S9GL-P AC Characteristics
Changed speed specifications and units of measure for t
READY
, t
RP
, t
RH
, and t
RPD
. Changed
specifications on t
READY
from maximum to minimum.
Revision A9 (June 15, 2005)
Ordering I nformation table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced V
IL
lines for I
CC4
, I
CC5
, I
CC6
.
Connection Diagrams
Modified 56-Pin Standard TSOP (pg 8). Modified 64-ball Fortified BGA.
Advance I nformation on S9GL-P AC Characteristics
Added second table.
Revision B0 (April 22, 2006)
Global
Changed document status to Full Production.
Ordering I nformation
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combina-
tions table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit ( PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the
Factory
Modified 1st bullet text.
W rite Protect ( W P# )
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
W ord Program Command Sequence
Modified fourth paragraph.
W rite Buffer Programming
Deleted note from eighth paragraph.
Program Suspend/ Program Resume Command Sequence
Corrected typos in first paragraph.
Lock Register Command Set Definitions
Modified fifth paragraph.
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| S29GL128N10TAIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時間 - 字，頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標準包裝:91 |
| S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
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