參數(shù)資料
型號： S29GL128N10TAIV13
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142BEC, TSOP-56
文件頁數(shù)： 76/100頁
文件大小： 952K
代理商： S29GL128N10TAIV13
74
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
DC Characteristics
CMOS Compatible
Notes:
1.
2.
3.
4.
5.
6.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
I
CC
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
Not 100% tested.
Automatic sleep mode enables the lower power mode when addresses remain stable tor t
ACC
+ 30 ns.
V
IO
= 1.65–1.95 V or 2.7–3.6 V
V
CC
= 3 V and V
IO
= 3V or 1.8V. When V
IO
is at 1.8V, I/O pins cannot operate at 3V.
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (
1
)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
WP/ACC: ± 2.0
μA
Others: ± 1.0
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
± 1.0
μA
I
CC1
V
CC
Active Read Current (
1
)
CE# = V
; OE# = V
IH
, V
CC
= V
CCmax
;
f
= 1 MHz, Byte Mode
6
20
mA
CE# = V
;
OE# = V
, V
CC
= V
CCmax
;
f
= 5 MHz, Word Mode
30
50
CE# = V
; OE# = V
IH
, V
CC
= V
CCmax
;
f = 10 MHz
60
90
I
CC2
V
CC
Intra-Page Read Current (
1
)
CE# = V
; OE# = V
IH,
V
CC
= V
CCmax
;
f = 10 MHz
1
10
mA
CE# = V
IL
, OE# = V
IH
, V
CC
= V
CCmax
;
f= 33 MHz
5
20
I
CC3
V
CC
Active Erase/Program Current (
2
,
3
)
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
50
90
mA
I
CC4
V
CC
Standby Current
V
CC
= V
CCmax
;
V
IO
= V
CC
; OE# = V
IH
;
V
= V
CE#, RESET# = V
CC
± 0.3 V
1
5
μA
I
CC5
V
CC
Reset Current
V
CC
= V
CCmax
; V
IO
= V
CC
;
V
= V
RESET# = V
SS
± 0.3 V
1
5
μA
I
CC6
Automatic Sleep Mode (
4
)
V
CC
= V
CCmax
;
V
IO
= V
CC
;
V
IH
= V
CC
V
= V
SS
+ 0.3 V / –0.1 V;
WP#/A
CC
= V
IH
1
5
μA
I
ACC
ACC Accelerated Program Current
CE# = V
OE# = V
IH,
V
CC
= V
CCmax,
WP#/ACC = V
IH
WP#/ACC
pin
10
20
mA
V
CC
pin
50
90
V
IL
Input Low Voltage (
5
)
–0.1
0.3 x V
IO
V
V
IH
Input High Voltage (
5
)
0.7 x V
IO
V
IO
+ 0.3
V
V
HH
Voltage for ACC Erase/Program
Acceleration
V
CC
= 2.7–3.6 V
11.5
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7–3.6 V
11.5
12.5
V
V
OL
Output Low Voltage (
5
)
I
OL
= 100 μA
0.15 x V
IO
V
V
OH
Output High Voltage (
5
)
I
OH
= -100 μA
0.85 x V
IO
V
V
LKO
Low V
CC
Lock-Out Voltage (
3
)
2.3
2.5
V
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