- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365394 > S29GL128N10TAIV13 (SPANSION LLC) 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology PDF資料下載
參數(shù)資料
| 型號： | S29GL128N10TAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142BEC, TSOP-56 |
| 文件頁數(shù)： | 67/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N10TAIV13 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁當(dāng)前第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
65
D a t a S h e e t
Table 14. Memory Array Commands (x8)
Command Sequence
( Notes)
Asynchronous Read (
6
)
Reset (
7
)
Manufacturer ID
Device ID (
8
)
Sector Protect Verify (
9
)
Secure Device Verify (
10
)
CFI Query (
11
)
Program
Write to Buffer (
12
)
Program Buffer to Flash
Write to Buffer Abort Reset (
13
)
Entry
Program (
14
)
Sector Erase (
14
)
Chip Erase (
14
)
Reset
Chip Erase
Sector Erase
Erase/Program Suspend (
15
)
Erase/Program Resume (
16
)
Entry
Program (
17
)
Read (
17
)
Exit (
17
)
C
Bus Cycles ( Notes
1
–
5
)
Third
Addr
Data
First
Second
Addr
Fourth
Addr
Fifth
Sixth
Addr
RA
XXX
AAA
AAA
AAA
AAA
AA
AAA
AAA
SA
AAA
AAA
XXX
XXX
XXX
XXX
AAA
AAA
XXX
XXX
AAA
AAA
00
AAA
Data
RD
F0
AA
AA
AA
AA
98
AA
AA
29
AA
AA
A0
80
80
90
AA
AA
B0
30
AA
AA
Data
AA
Data
Data
Addr
Data
Addr
Data
1
1
4
6
4
4
1
4
6
1
3
3
2
2
2
2
6
6
1
1
3
4
1
4
A
s
555
555
555
555
55
55
55
55
AAA
AAA
AAA
AAA
90
90
90
90
X00
X02
01
XX7E
Data
Data
X1C
Data
X1E
Data
[SA]X04
X06
555
555
55
55
AAA
PA
A0
25
PA
SA
PD
WC
PA
PD
WBL
PD
PA
555
PA
SA
SA
XXX
555
555
55
55
PD
30
10
00
55
55
555
AAA
F0
20
U
B
M
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
S
S
S
555
555
55
55
AAA
AAA
88
A0
PA
PD
555
55
AAA
90
XXX
00
Legend:
X = Don’t care.
RA = Read Address.
RD = Read Data.
PA = Program Address. Addresses latch on the falling edge of WE#
or CE# pulse, whichever occurs later.
PD = Program Data. Data latches on the rising edge of WE# or CE#
pulse, whichever occurs first.
SA = Sector Address. Any address that falls within a specified sector.
See Tables
2
–
4
for sector address ranges.
WBL = Write Buffer Location. Address must be within the same write
buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1.
2.
3.
4.
See
Table 1
on page 13 for description of bus operations.
All values are in hexadecimal.
Shaded cells indicate read cycles.
Address and data bits not specified in table, legend, or notes are
don’t cares (each hex digit implies 4 bits of data).
Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return reading
array data.
No unlock or command cycles required when bank is reading
array data.
Reset command is required to return to reading array data in
certain cases. See
Reset Command
section for details.
Data in cycles 5 and 6 are listed in
Table 5
on page 37.
The data is 00h for an unprotected sector and 01h for a
protected sector. PPB Status Read provides the same data but in
inverted form.
10. If DQ7 = 1, region is factory serialized and protected. If DQ7 =
0, region is unserialized and unprotected when shipped from
factory. See
Secured Silicon Sector Flash Memory Region
on
page 43 for more information.
5.
6.
7.
8.
9.
11. Command is valid when device is ready to read array data or
when device is in autoselect mode.
12. Total number of cycles in the command sequence is determined
by the number of words written to the write buffer.
13. Command sequence resets device for next command after
write-to-buffer operation.
14. Requires Entry command sequence prior to execution. Unlock
Bypass Reset command is required to return to reading array
data.
15. System may read and program in non-erasing sectors, or enter
the autoselect mode, when in the Erase Suspend mode. The
Erase Suspend command is valid only during a sector erase
operation.
16. Erase Resume command is valid only during the Erase Suspend
mode.
17. Requires Entry command sequence prior to execution. Secured
Silicon Sector Exit Reset command is required to exit this mode;
device may otherwise be placed in an unknown state.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128N10TAIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時間 - 字，頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
| S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。