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參數(shù)資料
| 型號(hào)： | S29GL128N10TAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142BEC, TSOP-56 |
| 文件頁(yè)數(shù)： | 96/100頁(yè) |
| 文件大小： | 952K |
| 代理商： | S29GL128N10TAIV13 |
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94
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Revision A4 (May 13, 2004)
Global
Removed references to RTSOP.
Distinctive Characteristics
Removed 16-word/32-byte page read buffer from Performance Characteristics.
Changed Low power consumption to 25 mA typical active read current and removed 10 mA
typical intrapage active read current.
Ordering I nformation
Changed formatting of pages.
Changed model numbers from 00,01,02,03 to 01, 02, V1, V2.
Table 1, “ Device Bus Operations”
Combined WP# and ACC columns.
Table 8, “ CFI Query I dentification String” , Table 9, “ System I nterface String” ,
Table 10, “ Device Geometry Definition” , and Table 11, “ Primary Vendor-Specific
Extended Query
Added Address (x8) column.
W ord Program Command Sequence
Added text to fourth paragraph.
Figure 1, “ W rite Buffer Programming Operation,”
Added note references and removed DQ15 and DQ13.
Figure 3, “ Program Suspend/ Program Resume,”
Changed field to read XXXh/B0h and XXXh/30h.
Passw ord Protection Command Set Definitions
Replaced all text.
Command Definitions
Changed the first cycle address of CFI Query to 55.
Table 14, “ Memory Array Commands ( x8) ”
Changed the third cycle data Device ID to 90.
Removed Unlock Bypass Reset.
Removed Note 12 and 13.
Figure 5, “ Data# Polling Algorithm,”
Removed DQ15 and DQ13.
Absolute Maximum Ratings
Removed VCC from
All other pins
with respect to Ground.
CMOS Compatible
Changed the Max of I
CC4
to 70 mA.
Added V
IL
to the Test conditions of I
CC5
, I
CC6
, and I
CC7
Change the Min of V
IL
to - 0.1 V.
Updated note 5.
Read-Only Operations– S29GL128N Only
Added t
CEH
parameter to table.
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| S29GL128N10TAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
| S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
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