參數(shù)資料
型號: S29GL128N10TAIV13
廠商: SPANSION LLC
元件分類: PROM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142BEC, TSOP-56
文件頁數(shù): 93/100頁
文件大小: 952K
代理商: S29GL128N10TAIV13
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
91
D a t a S h e e t
Notes:
1.
2.
V
IO
< V
CC
+ 200 mV.
V
and V
ramp must be in sync during power up. If RESET# is not stable for 35 μs, the following conditions may occur: the device does
not permit any read and write operations, valid read operations return FFh, and a hardware reset is required.
Maximum V
CC
power up current is 20 mA (RESET# = V
IL
).
3.
Figure 22. Power-On Reset Timings
Table 19. Power-Up Sequence Timings
Parameter
Description
Speed
Unit
t
VCS
Reset Low Time from Rising Edge of V
CC
(or last Reset pulse) to Rising Edge
of RESET#
Min
35
μs
t
VIOS
Reset Low Time from Rising Edge of V
IO
(or last Reset pulse) to Rising Edge
of RESET#
Min
35
μs
t
RH
Reset High Time Before Read
Max
200
ns
CE#
RESET#
t
RH
V
Vcc_ min
V
Vio_ min
t
VCS
t
VIOS
CC
IO
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