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參數(shù)資料
| 型號： | S29GL128N10TAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142BEC, TSOP-56 |
| 文件頁數(shù)： | 56/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N10TAIV13 |
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54
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Figure 1. Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Write number of addresses
to program minus 1(WC)
and Sector Address
Write program buffer to
flash sector address
Write first address/data
Write to a different
sector address
FAIL or ABORT
PASS
Read DQ15 - DQ0 at
Last Loaded Address
Read DQ15 - DQ0 with
address = Last Loaded
Address
Write next address/data pair
WC = WC - 1
WC = 0
Part of “Write to Buffer”
Command Sequence
Yes
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
No
Abort Write to
Buffer Operation
DQ7 = Data
DQ7 = Data
DQ5 = 1
DQ1 = 1
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
(Note 1)
(Note 2)
(Note 3)
Notes:
1.
When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data,
all addresses must fall within the selected
Write-Buffer Page.
2.
DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3.
If this flowchart location was reached because
DQ5=
1
, then the device FAILED. If this
flowchart location was reached because DQ1=
1
,
then the Write to Buffer operation was
ABORTED. In either case, the proper reset
command must be written before the device can
begin another operation. If DQ1= 1, write the
Write-Buffer-Programming-Abort-Reset
command. if DQ5= 1, write the Reset command.
4.
See
Table 12 on page 63
and
Table 14 on
page 65
for command sequences required for
write buffer programming.
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| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時間 - 字，頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
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| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
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