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參數(shù)資料
| 型號： | S29GL128N10TAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142BEC, TSOP-56 |
| 文件頁數(shù)： | 75/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N10TAIV13 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
73
D a t a S h e e t
Absolute Maximum Ratings
Storage Temperature, Plastic Packages. . . . . . . . . . . . . . . . –65°C to + 150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . –65°C to + 125°C
Voltage with Respect to Ground:
V
CC
(Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 4.0 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 4.0 V
A9, OE#, and ACC
(Note 2)
. . . . . . . . . . . . . . . . . . . –0.5 V to + 12.5 V
All other pins
(Note 1)
. . . . . . . . . . . . . . . . . . . . .–0.5 V to V
CC
+ 0.5V
Output Short Circuit Current
(Note 3)
. . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs
or I/Os may overshoot V
SS
to –2.0 V for periods of up to 20 ns. See
Figure 7, on
page 73
. Maximum DC voltage on input or I/Os is V
CC
+ 0.5 V. During voltage
transitions, input or I/O pins may overshoot to V
CC
+ 2.0 V for periods up to 20
ns. See
Figure 8, on page 73
.
2. Minimum DC input voltage on pins A9, OE#, and ACC is –0.5 V. During voltage
transitions, A9, OE#, and ACC may overshoot V
SS
to –2.0 V for periods of up to
20 ns. See
Figure 7, on page 73
. Maximum DC input voltage on pin A9, OE#, and
ACC is + 12.5 V which may overshoot to + 14.0V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short
circuit should not be greater than one second.
4. Stresses above those listed under
Absolute Maximum Ratings
may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device
reliability.
Operating Ranges
I ndustrial ( I ) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to + 85°C
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . + 2.7 V to + 3.6 V or + 3.0 V to 3.6 V
V
IO
(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 1.65 V to 1.95 V or V
CC
Notes:
1.
Operating ranges define those limits between which the functionality of the device
is guaranteed.
2.
See
Product Selector Guide on page 6
.
Figure 7. Maximum Negative Overshoot Waveform
Figure 8. Maximum Positive Overshoot Waveform
20 ns
20 ns
+ 0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+ 2.0 V
V
CC
+ 0.5 V
20 ns
2.0 V
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| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時間 - 字，頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
| S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
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