參數(shù)資料
型號(hào): S29GL128N10TAIV13
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: MO-142BEC, TSOP-56
文件頁(yè)數(shù): 97/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N10TAIV13
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
95
D a t a S h e e t
Figure 11, “ Read Operation Timings,”
Added t
CEH
to figure.
Figure 12, “ Page Read Timings,”
Change A1-A0 to A2-A0.
Erase and Program Operations
Updated t
WHWH1
and t
WHWH2
with values.
Figure 16, “ Chip/ Sector Erase Operation Timings,”
Changed 5555h to 55h and 3030h to 30h.
Figure 17, “ Data# Polling Timings ( During Embedded Algorithms) ,”
Removed DQ15 and DQ14-DQ8
Added Note 2
Figure 18, “ Toggle Bit Timings ( During Embedded Algorithms) ,”
Changed DQ6 & DQ14/DQ2 & DQ10 to DQ2 and DQ6.
Alternate CE# Controlled Erase and Program Operations
Updated t
WHWH1
and t
WHWH2
with values.
Latchup Characteristics
Removed Table.
Erase and Programming Performance
Updated TBD with values.
Updated Note 1 and 2.
Physical Dimensions
Removed the reverse pinout information and note 3.
Revision A5 (September 29, 2004)
Performance Characteristics
Removed 80 ns.
Product Selector Guide
Updated values in tables.
Ordering I nformation
Created a family table.
Operating Ranges
Updated VIO.
CMOS Characteristics
Created a family table.
Read-Only Operations
Created a family table.
Hardw are Reset ( RESET# )
Created a family table.
Figure 13, “ Reset Timings,”
Added t
RH
to waveform.
Erase and Program Operations
Created a family table.
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