參數(shù)資料
型號： S29GL128N10TAIV13
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142BEC, TSOP-56
文件頁數(shù)： 94/100頁
文件大?。?/td> 952K
代理商： S29GL128N10TAIV13
92
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Revision Summary
Revision A (September 2, 2003)
Initial Release.
Revision A1 (October 16, 2003)
Global
Added LAA064 package.
Distinctive Characteristics, Performance Characteristics
Clarified fifth bullet information.
Distinctive Characteristics, Softw are and Hardw are Features
Clarified
Password Sector Protection
to
Advanced Sector Protection
Connection Diagrams
Removed Note.
Ordering I nformation
Modified Package codes
Device Bus Operations, Table 1
Modified Table, removed Note.
Sector Address Tables
All address ranges doubled in all sector address tables.
Sector Protection
Lock Register: Corrected text to reflect 3 bits instead of 4.
Table 6, Lock Register: Corrected address range from DQ15-5 to DQ15-3; removed DQ4 and
DQ3; Corrected DQ15-3 Lock Register to Don’t Care.
Table 7, Sector Protection Schemes: Corrected Sector States.
Command Definitions
Table 12, Command Definitions, x16
Nonvolatile Sector Protection Command Set Entry Second Cycle Address corrected from 55
to 2AA.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Table 13, Command Definitions, x8
Password Read and Unlock Addresses and Data corrected.
Legend: Clarified PWDx, DATA
Notes: Clarified Note 19.
Test Conditions
Table 17 on page 75
, Test Specifications and
Figure 10, on page 76
, Input Waveforms and
Measurement Levels: Corrected Input Pulse Levels to 0.0–VIO; corrected Input timing mea-
surement reference levels to 0.5V
IO
.
相關(guān)PDF資料
PDF描述
S29GL128N10TAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10TAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10TAIV23 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10TFI010 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10TFI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁:100ns 訪問時(shí)間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FAI020 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray
S29GL128N11FAI023 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*