參數(shù)資料
型號： S29GL128N10TAIV13
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142BEC, TSOP-56
文件頁數(shù)： 87/100頁
文件大?。?/td> 952K
代理商： S29GL128N10TAIV13
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
85
D a t a S h e e t
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-
S29GL128N, S29GL256N, S29GL512N
Notes:
1. Not 100% tested.
2. See
AC Characteristics on page 77
for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with V
IO
= V
CC
= 3 V. AC specifications for 110 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
Parameter
Speed Options
JEDEC
Std.
Description
90
(Note 6)
100
110
110
Unit
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
100
110
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
T
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during
toggle bit polling
Min
0
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
240
μs
Effective Write Buffer Program
Operation (Notes
2
,
4
)
Per Word
Typ
15
μs
Effective Accelerated Write Buffer
Program Operation (Notes
2
,
4
)
Per Word
Typ
13.5
μs
Program Operation
(Note 2)
Word
Typ
60
μs
Accelerated Programming
Operation
(Note 2)
Word
Typ
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
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