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參數(shù)資料
| 型號(hào)： | S29GL128N10TAIV13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | MO-142BEC, TSOP-56 |
| 文件頁(yè)數(shù)： | 14/100頁(yè) |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N10TAIV13 |
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12
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Ordering Information
The ordering part number is formed by a valid combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of
specific valid combinations and to check on newly released combinations.
Notes:
1.
Type 0 is standard. Specify other options as required. TSOP can be packed in Types 0 and 3; BGA
can be packed in Types 0, 2, 3.
TSOP package marking omits packing type designator from ordering part number.
BGA package marking omits leading “S29” and packing type designator from ordering part
number.
Contact a local sales representative for availability.
2.
3.
4.
S29GL512N
11
F
F
I
01
0
PACKI NG TY PE
0
=
2
=
3
=
Tray (standard; see note 1)
7” Tape and Reel
13” Tape and Reel
MODEL NUMBER ( V
I O
range, protection w hen W P# = V
I L
)
01
=
V
IO
= V
CC
= 2.7 to 3.6 V, highest address sector protected
02
=
V
IO
= V
CC
= 2.7 to 3.6 V, lowest address sector protected
V1
=
V
IO
= 1.65 to 3.6 V, V
CC
= 2.7 to 3.6 V, highest address sector protected
V2
=
V
IO
= 1.65 to 3.6 V, V
CC
= 2.7 to 3.6 V, lowest address sector protected
R1
=
V
IO
= V
CC
= 3.0 to 3.6 V, highest address sector protected
R2
=
V
IO
= V
CC
= 3.0 to 3.6 V, lowest address sector protected
TEMPERATURE RANGE
I
= Industrial (–40
°
C to + 85
°
C)
PACKAGE MATERI ALS SET
A
= SnPb
F
= Pb-free (Recommended)
PACKAGE TY PE
T
=
Thin Small Outline Package (TSOP) Standard Pinout (TS056)
F
=
Fortified Ball Grid Array, 1.0 mm pitch package (LAA064)
SPEED OPTI ON
90
= 90 ns (Note 4)
10
= 100 ns (Note 4)
11
= 110 ns (Recommended)
DEVI CE NUMBER/ DESCRI PTI ON
S29GL128N, S29GL256N, S29GL512N
3.0 Volt-only, 512 Megabit (32 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBit
TM
process technology
S29GL-N Valid Combinations
Base Part Number
Speed (ns)
Package
Temperature
Model Number
Packing Type
S29GL128N
90
TA, TF
(Note 2)
; FA, FF
(Note 3)
I
R1, R2
0, 2, 3 (Note 1)
10, 11
01, 02
11
V1, V2
S29GL256N
90
TA, TF
(Note 2)
; FA, FF
(Note 3)
I
R1, R2
0, 2, 3 (Note 1)
10, 11
01, 02
11
V1, V2
S29GL512N
10, 11
TA, TF
(Note 2)
; FA, FF
(Note 3)
I
01, 02
0, 2, 3 (Note 1)
11
V1, V2
相關(guān)PDF資料 |
PDF描述 |
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| S29GL128N10TAIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TAIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TAIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N10TFI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128N10TF101 | 制造商:Spansion 功能描述: |
| S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫(xiě)周期時(shí)間 - 字，頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91 |
| S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
| S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |
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