參數(shù)資料
型號: Pentium II 266
廠商: Intel Corp.
英文描述: 32-Bit Processor With Low-Power Module(帶低能量模塊的32位處理器)
中文描述: 32位處理器低功率模塊(帶低能量模塊的32位處理器)
文件頁數(shù): 34/50頁
文件大?。?/td> 1003K
代理商: PENTIUM II 266
Pentium
II Processor – Low-Power Module
34
Datasheet
4.6.4.1
Slew-Rate Control: Circuit Description
In Figure 8, PWR is the voltage generated by applying the AC Adaptor or Battery. M1 is a low
RDS(on) P-Channel MOSFET such as a Siliconix SI4435DY. When the voltage on PWR is applied
and increased to over 4.75 V, the UNDER_VOLTAGE_LOCKOUT Circuit allows R4 to pull up
the gate of M3 to start a turn-on sequence. M3 pulls its drain toward ground forcing current to flow
through R2. M1 will not start to source any current until after t_delay with t_delay defined as:
The manufacturer’s Vgs_max specification of 20 V must never be exceeded. However, Vgs_max
must be high enough to keep the RDS (on) of the device as low as possible. After the initial
t_delay, M1 will begin to source current and V_DC will start to ramp up. The ramp up time,
t_ramp, is defined as:
Maximum current during the voltage ramping is:
With the circuit shown in Figure 10, t_delay = 5.53 ms, t_tran = 14.0 ms and I_max = 146 mA.
Figure 7. Over Current Protection Circuit
t_delay
R.
Vt
Vgs_max
Vpwr
Vgs_max
.
R16
R16 R2
Vpwr
t_ramp
R.
Vsat
Vgs_max
t_delay
I
.
CtotalVpwr
t_ramp
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