參數(shù)資料
型號: Pentium II 266
廠商: Intel Corp.
英文描述: 32-Bit Processor With Low-Power Module(帶低能量模塊的32位處理器)
中文描述: 32位處理器低功率模塊(帶低能量模塊的32位處理器)
文件頁數(shù): 11/50頁
文件大?。?/td> 1003K
代理商: PENTIUM II 266
Pentium
II Processor – Low-Power Module
Datasheet
11
The signal description also includes the type of buffer used for a particular signal:
3.1.2
Memory (109 Signals)
Table 2
lists the Pentium II Processor – Low-Power Module memory interface signals.
GTL+
Open Drain GTL+ interface signal
PCI
PCI bus interface signals
AGP
AGP interface signals
CMOS
The Pentium II Processor – Low-Power Module has Low Voltage TTL compatible
(LVTTL) interfacing.
Table 2. Memory Signal Descriptions
Name
Type
Voltage
Description
MECC[7:0]
I/O
CMOS
V_3
Memory ECC Data:
These signals carry Memory ECC data
during access to DRAM.
These pins are implemented by design
but not tested on the module.
RASA[5:0]# or
CSA[5:0]#
O
CMOS
V_3
Row Address Strobe (EDO):
These pins select the DRAM row.
Chip Select (SDRAM):
These pins activate the SDRAMs.
SDRAM accepts any command when its CS# pin is active low.
CASA[7:0]# or
DQMA[7:0]
O
CMOS
V_3
Column Address Strobe (EDO):
These pins select the DRAM
column.
Input/Output Data Mask (SDRAM):
These pins act as
synchronized output enables during a read cycle and as a byte
mask during a write cycle.
MAB[9:0]#
MAB[10]
MAB[12:11]#
MAB[13]
O
CMOS
V_3
Memory Address (EDO/SDRAM):
This is the row and column
address for DRAM.
The 443BX Host Bridge/Controller has two
identical sets of address lines (MAA and MAB#). The module
supports only the MAB set of address lines. For additional
addressing features, please refer to the Intel 440BX AGPset
datasheet (Order Number 290633).
MWEA#
O
CMOS
V_3
Memory Write Enable (EDO/SDRAM):
MWEA# should be used
as the write enable for the memory data bus.
SRASA#
O
CMOS
V_3
SDRAM Row Address Strobe (SDRAM):
When active low, this
signal latches Row Address on the positive edge of the clock. This
signal also allows Row access and pre-charge.
SCASA#
O
CMOS
V_3
SDRAM Column Address Strobe (SDRAM):
When active low,
this signal latches Column Address on the positive edge of the
clock.
This signal also allows Column access.
CKE[5:0]
O
CMOS
V_3
SDRAM Clock Enable (SDRAM):
SDRAM clock enable pin.
When these signals are de-asserted, SDRAM enters power-down
mode.
Each row is individually controlled by its own clock enable.
MD[63:0]
I/O
CMOS
V_3
Memory Data:
These signals are connected to the DRAM data
bus. They are not terminated on the module.
NOTES:
1. DQMA signals are non-inverted now. Please refer to the 82443BX Spec Update.
2. MAB[13] is a non-inverted address signal now. Please refer to 82443BX Spec Update.
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