參數(shù)資料
型號： P95020NQG
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： 電源管理
英文描述： 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC132
封裝： 10 X 10 MM, 0.85 MM HEIGHT, QFN-132
文件頁數(shù)： 47/169頁
文件大?。?/td> 4297K
代理商： P95020NQG
IDTP95020
Product Datasheet
September 2, 2011 Revision 1.3 Final
140
2011 Integrated Device Technology, Inc.
Hotswap – Electrical Characteristics
Unless otherwise specified, typical values at TA = 25°C, VSYS = 3.8V, VHSPWR=4.5V, TA = 0°C to +70°C.
Table 230. Hotswap Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP MAX
UNIT
VHSPWR Input voltage Range
Mosfet Inputs
3.0
3.3
5.5
V
IQ(SW-ON)
Quiescent Current from
HSPWR
VSYS =4.5V,HSPWR = 3.3V, IOUT=0
HS_CTRL_REG
0x36 [3:0] = 1= ON
24
A
IQ(SW-OFF)
Off-Supply Current from
HSPWR
VSYS = 4.5V,HSPWR = 3.3V, HSCTRL1,
HSCTRL2 = GND
HS_CTRL_REG
0x36 [3:0] = 0 = OFF
1
A
RDS(ON)
On Resistance
VHSPWR = 3.0V to 5.0V
1.2
1.6
Ω
ILIM (MIN)
Current Limit
VHSPWR = 3.0V to 5.0V
180
250
mA
tRESP
Current Limit Response Time
10
s
VIL
HSCTRL1, HSCTRL2, Input
Low Voltage
VHSPWR = 3V to 4.5V
0.3 x
VHSPWR
V
VIH
HSCTRL1, HSCTRL2, Input
High Voltage
VHSPWR = 3V to 4.5V
0.7 x
VHSPWR
VHSPWR +
0.3
V
IOSINK
HSCTRL1, HSCTRL2 Leakage
1
A
tOFF
Turn-Off Time
VHSPWR = 5V [Note 1]
1
s
tON
Turn-On Time
VHSPWR = 5V [Note 1]
15
s
Note 1: Guaranteed by design and/or characterization.
Hotswap – Typical Performance Characteristics
Figure 45. Hotswap #1 ON Resistance vs. Temperature
Figure 46. Hotswap #2 ON Resistance vs. Temperature
Hotswap #1 RDSon () vs. Temperature (C)
1
1.1
1.2
1.3
1.4
1.5
-40
-20
0
20
40
60
80
TEMPERATURE (C)
RDS
o
n
(
)
VIN = 3.6V
VIN = 4.5V
Hotswap #2 RDSon () vs. Temperature (C)
1
1.1
1.2
1.3
1.4
1.5
-40
-20
0
2040
6080
TEMPERATURE (C)
RDS
o
n
(
)
VIN = 3.6V
VIN = 4.5V
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