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Table 57: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued)
Notes 1–8 apply to the entire table
Parameter
Symbol
DDR3-1866
Units
Notes
Min
Max
DQ Strobe Input Timing
DQS, DQS# rising to CK, CK# rising
tDQSS
–0.27
0.27
CK
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
CK
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
CK
DQS, DQS# falling setup to CK, CK# rising
tDSS
0.18
–
CK
DQS, DQS# falling hold from CK, CK# rising
tDSH
0.18
–
CK
DQS, DQS# differential WRITE preamble
tWPRE
0.9
–
CK
DQS, DQS# differential WRITE postamble
tWPST
0.3
–
CK
DQ Strobe Output Timing
DQS, DQS# rising to/from rising CK, CK#
tDQSCK
–195
195
ps
DQS, DQS# rising to/from rising CK, CK# when DLL is disabled
tDQSCK
DLL_DIS
1
10
ns
DQS, DQS# differential output high time
tQSH
0.40
–
CK
DQS, DQS# differential output low time
tQSL
0.40
–
CK
DQS, DQS# Low-Z time (RL - 1)
tLZ (DQS)
–390
195
ps
DQS, DQS# High-Z time (RL + BL/2)
tHZ (DQS)
–
195
ps
DQS, DQS# differential READ preamble
tRPRE
0.9
CK
DQS, DQS# differential READ postamble
tRPST
0.3
CK
Command and Address Timing
DLL locking time
tDLLK
512
–
CK
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification)
tIS
AC175
65
–
ps
VREF @ 1 V/ns
200
–
ps
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification)
tIS
AC150
150
–
ps
VREF @ 1 V/ns
275
–
ps
CTRL, CMD, ADDR hold from CK,CK#
Base (specification)
tIH
DC100
100
–
ps
VREF @ 1 V/ns
200
–
ps
Minimum CTRL, CMD, ADDR pulse width
tIPW
535
–
ps
ACTIVATE to internal READ or WRITE delay
tRCD
ns
PRECHARGE command period
tRP
ns
2Gb:
x4,
x8,
x16
DDR3
SDRAM
Electrical
Characteristics
and
AC
Operating
Conditions
PDF:
09005aef826aaadc
2Gb_DDR3_SDRAM.pdf
–
Rev.
K
04/10
EN
89
Micron
Technology,
Inc.
reserves
the
right
to
change
products
or
specifications
without
notice.
2006
Micron
Technology,
Inc.
All
rights
reserved.