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DDR3 SDRAM
MT41J512M4 – 64 Meg x 4 x 8 Banks
MT41J256M8 – 32 Meg x 8 x 8 Banks
MT41J128M16 – 16 Meg x 16 x 8 Banks
Features
VDD = VDDQ = +1.5V ±0.075V
1.5V center-terminated push/pull I/O
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
CAS READ latency (CL): 5, 6, 7, 8, 9, 10, or 11
POSTED CAS ADDITIVE latency (AL): 0, CL - 1,
CL - 2
CAS WRITE latency (CWL): 5, 6, 7, 8, based on tCK
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
TC of 0°C to +95°C
– 64ms, 8192 cycle refresh at 0°C to +85°C
– 32ms, 8192 cycle refresh at +85°C to +95°C
Clock frequency range of 300–800 MHz
Self refresh temperature (SRT)
Write leveling
Multipurpose register
Output driver calibration
Marking
Configuration
– 512 Meg x 4
512M4
– 256 Meg x 8
256M8
– 128 Meg x 16
128M16
FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 10.5mm) Rev. H
DA
– 78-ball (9mm x 11.5mm) Rev. D
HX
– 82-ball (12.5mm x 15mm) Rev. A
JE
FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. D
HA
Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866)
-107
– 1.25ns @ CL = 11 (DDR3-1600)
-125
– 1.5ns @ CL = 10 (DDR3-1333)
-15
– 1.5ns @ CL = 9 (DDR3-1333)
-15E
– 1.87ns @ CL = 8 (DDR3-1066)
-187
– 1.87ns @ CL = 7 (DDR3-1066)
-187E
Operating temperature
– Commercial (0°C ≤ TC ≤ +95°C)
None
– Industrial (–40°C ≤ TC ≤ +95°C)
IT
Revision
:A/:D/:H
Note: 1. Not all options listed can be combined to
define an offered product. Use the part
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
Data Rate (MT/s)
Target tRCD-tRP-CL
tRCD (ns)
tRP (ns)
CL (ns)
1866
13-13-13
13.91
1600
11-11-11
13.75
1333
10-10-10
15
1333
9-9-9
13.5
-187
1066
8-8-8
15
-187E
1066
7-7-7
13.1
Notes: 1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1066, CL = 8 (-187).
2Gb: x4, x8, x16 DDR3 SDRAM
Features
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.