參數(shù)資料
型號： 5962D1022901QXC
元件分類： DRAM
英文描述： 64M X 40 SYNCHRONOUS DRAM, 5.4 ns, CQFP128
封裝： CERAMIC, QFP-128
文件頁數(shù)： 40/68頁
文件大小： 1475K
代理商： 5962D1022901QXC
45
AC Functional Characteristics (Pre/Post-Radiation
)*
Notes 4, 5, 6, 7, 8, and 9apply to entire table. (VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
PARAMETER
Symbol
x40
x48
Units
Notes
READ/WRITE command-to-READ/WRITE command
tCCD
1
tCK
CKE to clock disable or power-down entry mode
tCKED
1
tCK
CKE to clock enable or power-down exit setup mode
tPED
1
tCK
DQM input data delay
tDQD
0
tCK
DQM to data mask during WRITEs
tDQM
0
tCK
DQM to data High-Z during READs
tDQZ
2
tCK
WRITE command to input data delay
tDWD
0
tCK
Data-in to ACTIVE command
tDAL
5
tCK
Data-in to PRECHARGE command
tDPL
2
tCK
Last data-in to burst STOP command
tBDL
1
tCK
Last data-in to new READ/WRITE command
tCDL
1
tCK
Last data-in to PRECHARGE command
tRDL
2
tCK
LOAD MODE REGISTER command to ACTIVE or REFRESH
command
tMRD
2
tCK
Dataout to High-Z form PRECHARGE command
tROH(3)
3
tCK
tROH(2)
2
tCK
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