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| 型號(hào)： | 5962D1022901QXC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 40 SYNCHRONOUS DRAM, 5.4 ns, CQFP128 |
| 封裝： | CERAMIC, QFP-128 |
| 文件頁(yè)數(shù)： | 38/68頁(yè) |
| 文件大?。?/td> | 1475K |
| 代理商： | 5962D1022901QXC |
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43
DC Electrical Characteristics and Operating Conditions (Pre/Post-Radiation
)*
Notes 1, 4, and 5 apply to entire table. (VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
Parameter/Condition
Symbol
Min
Max
Units
Notes
Input high voltage: Logic 1; All inputs
VIH
2
V
Input low voltage: Logic 0; All inputs
VIL
0.8
V
Input leakage current: Any input 0V< VIN < VDD
(All other pins not under test = 0V)
II
-5
5
μA
Output leakage current: DQs are disabled;
0V < VOUT < VDDQ
IOZ
-5
5
μA
Output levels:
Output high voltage (IOUT = -4mA)
VOH
2.4
--
V
Output low voltage (IOUT = 4mA)
VOL
--
0.4
V
IDD Specifications and Conditions (Pre/Post-Radiation)*
Notes 1, 4, 5, 9, and 11 apply to entire table. (VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
Parameter/Condition
Symbol
Max
Units
Notes
x40
x48
Operating current: active mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
600
720
mA
3, 12, 13,
15
Standby current: power-down mode;
CKE = LOW; All banks idle
IDD2
17.5
21
mA
15
Standby current: active mode; CS# = HIGH CKE = HIGH; All banks
active after tRCD met; No accesses in progress
IDD3
225
270
mA
3, 10,13,
15
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
IDD4
625
750
mA
3, 12, 13,
15
Auto refresh current:
CS# = HIGH; CKE = HIGH
tRFC = tRFC (MIN)
IDD5
1300
mA
3, 12, 13,
15, 16
tRFC =3.9 μs
IDD6
30
36
mA
Capacitance
Notes 2 apply to entire table
Parameter
Condition
Symbol
Max
Units
Input capacitance: All other input-only pins
f=1MHz @ 0V CIN
Cl1
TBD
pF
Input/output capacitance: DQs
f=1MHz @ 0V CIO
Cl1
TBD
pF
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