參數(shù)資料
型號: 5962D1022901QXC
元件分類: DRAM
英文描述: 64M X 40 SYNCHRONOUS DRAM, 5.4 ns, CQFP128
封裝: CERAMIC, QFP-128
文件頁數(shù): 39/68頁
文件大?。?/td> 1475K
代理商: 5962D1022901QXC
44
AC CHARACTERISTICS and RECOMMENDED OPERATING CONDITIONS (Pre/Post-Radiation
)*
Notes 4, 5, 6, 7, 8 and 9 apply to entire table.
(VDD, VDDQ = +3.3V +/-0.3V; Unless otherwise noted, Tc is per temperature range ordered.)
SYMBOL
PARAMETER
MIN
MAX
UNIT
NOTES
tAC(3)
Access time from CLK (positive edge) CL=3
5.4
ns
tAC(2)
Access time from CLK (positive edge) CL=2
6
tAH
Address hold time
0.8
ns
tAS
Address setup time
1.5
ns
tCH
CLK high-level width
2.5
ns
tCL
CLK low-level width
2.5
ns
tCK3
Clock cycle time CL=3
7.5
ns
tCK2
Clock cycle time CL = 2
10
ns
14
tCKH
CKE hold time
0.8
ns
tCKS
CKE setup time
1.5
ns
tCMH
CS#, RS#, CAS#, WE#, DQM hold time
0.8
ns
tCMS
CS#, RS#, CAS#, WE#, DQM setup time
1.5
ns
tDH
Data-in hold time
0.8
ns
tDS
Data-in setup time
1.5
ns
tHZ3
Data-out High-Z time CL = 3
5.4
ns
tHZ2
Data-out High-Z time CL = 2
6.0
ns
tLZ
Data-out Low-Z time
1
ns
tOH
Data-out Hold time (load)
2.7
ns
tOHN
Data-out hold time (no load)
1.8
ns
tRAS
ACTIVE-to-PRECHARGE command
44
120,000
ns
tRC
ACTIVE-to-ACTIVE command period
66
ns
tRCD
ACTIVE-to-READ or WRITE delay
20
ns
tREF
Refresh period (8,192 rows)
32
ms
tRFC
AUTO REFRESH period
66
ns
tRP
PRECHARGE command period
20
ns
tRRD
ACTIVE bank a-to-ACTIVE bank b command
15
ns
tT
Transition time
0.3
1.2
ns
6
tWR
WRITE recovery time
1 CLK +
7ns
15
ns
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