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參數(shù)資料
| 型號(hào)： | 5962D1022901QXC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 40 SYNCHRONOUS DRAM, 5.4 ns, CQFP128 |
| 封裝： | CERAMIC, QFP-128 |
| 文件頁(yè)數(shù)： | 32/68頁(yè) |
| 文件大?。?/td> | 1475K |
| 代理商： | 5962D1022901QXC |
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38
Notes:
1. CKEn is the logic state of CKE at clock edge n; CKEn - 1 was the state of CKE at the previous clock edge.
2. Current state is the state of the SDRAM immediately prior to clock edge n.
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.
4. All states and sequences not shown are illegal or reserved.
5. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n + 1 (provided that tCKS is met).
6. After exiting clock suspend at clock edge n, the device resumes operation and recognize the next command at clock edge n + 1.
Table 6: Truth Table 2 - CKE
Notes 1-4 apply to entire table; Notes appear below.
CKEn-1
CKEn
Current State
COMMANDn
ACTIONn
Notes
L
Power-down
X
Maintain power-down
Clock suspend
X
Maintain clock suspend
L
H
Power-down
COMMAND INHIBIT or NOP
Exit power-down
5
Clock suspend
X
Exit clock suspend
6
H
L
All banks idle
COMMAND INHIBIT or NOP
Power-down entry
All banks idle
AUTO REFRESH
Reading or writing
VALID
Clock suspend entry
H
See Table 7
Table 7: Truth Table 3 - Current State Bank n, Command to Bank n
Current
State
CS#
RAS# CAS#
WE#
Command (Action)
Notes
Any
H
X
COMMAND INHIBIT (NOP/continue previous operation)
L
H
NO OPERATION (NOP/continue previous operation)
Idle
L
H
ACTIVE (Select and activiate row)
L
H
AUTO REFRESH
7
L
LOAD MODE REGISTER
7
L
H
L
PRECHARGE
11
Row
active
L
H
L
H
READ (Select column and start READ burst)
10
L
H
L
WRITE (Select column and start WRITE burst)
10
L
H
L
PRECHARGE (Deactivate row in bank or banks)
8
Read
(auto
precharge
disabled)
L
H
L
H
READ (Select column and start new READ burst)
10
L
H
L
WRITE (Select column and start WRITE burst)
10
L
H
L
PRECHARGE (Truncate READ burst, start PRECHARGE)
8
L
H
L
BURST TERMINATE
9
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