參數(shù)資料
型號(hào)： M34559G6FP
元件分類(lèi)： 微控制器/微處理器
英文描述： 4-BIT, MROM, 6 MHz, MICROCONTROLLER, PQFP52
封裝： 10 X 10 MM, 0.65 MM PITCH, PLASTIC, LQFP-52
文件頁(yè)數(shù)： 83/93頁(yè)
文件大小： 1810K
代理商： M34559G6FP
CBTU4411_3
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 12 October 2009
9 of 20
NXP Semiconductors
CBTU4411
11-bit DDR2 SDRAM MUX/bus switch with 12
ON resistance
9.
Static characteristics
[1]
All typical values are at VDD = 1.8 V, Tamb =25 °C.
[2]
Measured by the current between the host and the DIMM terminals at the indicated voltages on each side of the switch.
Table 8.
Static characteristics
Tamb =0 °C to +85 °C
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
VIK
input clamping voltage
VDD = 1.7 V; II = 18 mA
-
1.2
V
VT
termination voltage
on S0, S1 inputs when
Sn = open circuit and
TERM = HIGH
0.5VDD 0.04 0.5VDD
0.5VDD + 0.04
V
Vpu
pull-up voltage
channel 10 DIMM port;
EN = LOW; Vbias = 0.54 V;
VDD = 1.8 V; STREN = HIGH;
unselected DIMM port
0.5VDD + 0.25 0.75VDD
0.75VDD + 0.25 V
ILI
input leakage current
VDD = 1.8 V; VI =VDD or GND;
Sn = VDD; Vbias =VDD;
TERM = LOW
S0, S1
-
±100
A
host port
-
±100
A
DIMM port
-
±100
A
IDD
supply current
VDD = 1.8 V; IO =0A;
VI =VDD or GND
EN=LOW
-
6
9
mA
EN = HIGH
-
5
100
A
Cin
input capacitance
S0, S1 pins; VI = 1.8 V or 0 V
-
3
-
pF
Con
switch on capacitance
VI = 0.9 V
-
4
6
pF
RON
ON resistance
VDD = 1.8 V; VHPn =Vref;
VxDPn =Vref ± 250 mV
[2] 712
17
VDD = 1.8 V; VHPn =Vref;
VxDPn =Vref ± 500 mV
[2] 712
17
RON
ON resistance
mismatch between
channels
variation over channel voltage;
EN = LOW; Vbias = 0.54 V;
VDD = 1.8 V; STREN = LOW;
selected DIMM port
VHPn = 0.5VDD + 250 mV and
VxDPn = 0.5VDD 250 mV
-
1.8
2.5
Rpd
pull-down resistance
EN = HIGH; Vbias = 0.54 V;
VDD = 1.8 V
280
400
520
channel 10; STREN = LOW
280
400
520
channel 10; STREN = HIGH
780
1120
1460
RPU
pull-up resistance
EN = HIGH; Vbias = 0.54 V;
VDD = 1.8 V;
channel 10; STREN = HIGH
430
622
810
RT
termination resistance
Sn input; Thevenin equivalent
(see Figure 1); input voltage
sweep 0 < VI (Sn) < VDD;
TERM = HIGH
55
80
105
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