參數(shù)資料
型號： ISP1362EE,551
廠商： NXP SEMICONDUCTORS
元件分類： 總線控制器
英文描述： UNIVERSAL SERIAL BUS CONTROLLER, PBGA64
封裝： 6 X 6 MM, 0.80 HEIGHT, PLASTIC, MO-195, SOT-543-1, TFBGA-64
文件頁數(shù)： 95/152頁
文件大?。?/td> 677K
代理商： ISP1362EE,551
ISP1362_5
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 8 May 2007
47 of 152
NXP Semiconductors
ISP1362
Single-chip USB OTG Controller
In general applications, you can use a P-channel MOSFET as the power switch for VBUS.
Connect the 5 V power supply to the source pole of the P-channel MOSFET, VBUS to the
drain pole, and H_PSWn to the gate pole. This voltage drop (
V) across the drain and
source poles can be called the overcurrent trip voltage. For the internal overcurrent
detection circuit, a voltage comparator has been designed-in, with a nominal voltage
threshold of 75 mV. Therefore, when the overcurrent trip voltage (
V) exceeds the voltage
threshold, H_PSWn will output a HIGH level to turn off the P-channel MOSFET. If the
P-channel MOSFET has RDSon of 150 m, the overcurrent threshold will be 500 mA. The
selection of a P-channel MOSFET with a different RDSon will result in a different
overcurrent threshold.
11.8.2 Using external overcurrent detection circuit
When VCC (pin 56) is connected to the 3.3 V power supply instead of the 5 V power
supply, the internal overcurrent detection circuit cannot be used. An external overcurrent
detection circuit must be used instead. Nevertheless, regardless of the VCC connection, an
external overcurrent detection circuit can be used from time to time. To use an external
overcurrent detection circuit, set AnalogOCEnable, bit 10 of register
HcHardwareConguration, to logic 0. By default, this bit is set to logic 0 after reset.
Therefore, the HCD does not need to clear this bit.
Figure 24 shows how to use an external overcurrent detection circuit.
(1) 100
F for the host port, or 4.7 F for the OTG port.
Fig 23. Using internal overcurrent detection circuit
004aaa148
H_OCn
H_PSWn
VBUS
DM
DP
GND
chassis
1
2
3
4
5
6
C41(1)
DGND
PSU_5V
VDD(5V)
C17
0.1
F
DGND
FB2
P_channel
MOSFET
C18
0.1
F
R31
10 k
source
drain
gate
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