參數(shù)資料
型號: HYB18T256324F-20
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit GDDR3 DRAM [600MHz]
中文描述: 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁數(shù): 59/80頁
文件大?。?/td> 2026K
代理商: HYB18T256324F-20
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Functional Description
Data Sheet
59
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
3.10
Precharge (PRE/PREALL)
Figure 43
Precharge Command
The Precharge command is used to deactivate the
open row in a particular bank (PRE) or the open rows in
all banks (PREALL). The bank(s) will enter the idle
state and be available again for a new row access after
the time t
RP
. A8/AP sampled with the PRE command
determines whether one or all banks are to be
precharged. For PRE commands BA0 and BA1 select
the bank. For PREALL inputs BA0 and BA1 are “Don’t
Care”. The PRE/PREALL command may not be given
unless the
t
RAS
requirement is met for the selected bank
(PRE), or for all banks (PREALL).
#,+
#,+
2!3
#+%
#!3
7%
!
"! "!
" !
"! "ANK !DDRESS
$ONgT #ARE
!
! ,,
!,, (IGH SELECTS ALL BANKS
,OW SELECTS "ANK "!
#3
Table 26
A8 / AP
0
0
0
0
1
BA1, BA0 precharge bank selection
BA1
0
0
1
1
X
BA0
0
1
0
1
X
precharged bank(s)
Bank 0 only
Bank 1 only
Bank 2 only
Bank 3 only
All banks
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