參數(shù)資料
型號(hào)： HYB18T256324F-20
廠商： INFINEON TECHNOLOGIES AG
英文描述： 256-Mbit GDDR3 DRAM [600MHz]
中文描述： 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁(yè)數(shù)： 27/80頁(yè)
文件大?。?/td> 2026K
代理商： HYB18T256324F-20
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Functional Description
Data Sheet
27
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
Figure 9
ODT Disable Timing during a READ command
3.3.4
The Driver and Termination impedances are determined by applying
V
DDQ/2
nominal (1.0 V) at the corresponding
input / output and by measuring the current flowing into or out of the device.
V
DDQ
is set to the nominal value of
2.0 V. (see
Table 1
)
I
OH
is the current flowing out of DQ when the Pull-Up transistor is activated and the DQ termination disabled.
I
OL
is the current flowing into DQ when the Pull-Down transistor is activated and the DQ termination disabled.
I
TCAH(ZQ)
is the current flowing out of the Termination of Commands and Addresses for a ZQ termination value.
Output impedance and Termination DC Electrical Characteristics
Note:1: Measurement performed with
V
DDQ
=2.0 V (nominal see
Table 1
) and by applying
V
DDQ/2
(1.0 V) at the
corresponding Input / Output.
0°C
≤
T
C
≤
85°C.
Table 15
Parameter
DC Electrical Characteristics
Nom.
240
min
20.5
20.5
3.4
Unit
Notes
ZQ Value
max
25.0
25.0
4.2
I
OH
I
OL
I
TCAH(ZQ)
ZQ/6
ZQ/6
ZQ
mA
mA
mA
1
1
1
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#,+
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