參數(shù)資料
型號： AM42BDS6408G
英文描述： 250NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
中文描述： Am42BDS6408G -堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數(shù)： 65/73頁
文件大?。?/td> 1080K
代理商： AM42BDS6408G
64
Am42BDS6408G
November 1, 2002
P R E L I M I N A R Y
SRAM AC CHARACTERISTICS
Figure 35.
SRAM Read Cycle
Notes:
1. WE# = V
IH
.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
Data Valid
High-Z
t
RC
CS#1
Address
UB#, LB#
OE#
Data Out
t
OH
t
AA
t
CO1
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
CS2
t
CO2
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