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參數(shù)資料
| 型號(hào)： | AM42BDS6408G |
| 英文描述： | 250NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM) |
| 中文描述： | Am42BDS6408G -堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁數(shù)： | 38/73頁 |
| 文件大?。?/td> | 1080K |
| 代理商： | AM42BDS6408G |
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November 1, 2002
Am42BDS6408G
37
P R E L I M I N A R Y
Notes:
1. Typical values measured at V
CC
= 2.0 V, T
A
= 25
°
C. Not 100% tested.
2. Undershoot is –1.0 V when pulse width
≤
20 ns.
3. Overshoot is V
CC
+ 1.0 V when pulse width
≤
20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
I
IO
= 0 mA, CE1#s = V
IL
, CE2s =
WE# = V
IH
, V
IN
= V
IH
or V
IL
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
≤
0.2 V,
CE2
≥
V
CC
– 0.2 V, V
IN
≤
0.2 V or
V
IN
≥
V
CC
– 0.2 V
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
I
OL
= 0.1 mA
I
OH
= –0.1 mA
CE1#s
≥
V
CC
– 0.2 V, CE2
≥
V
CC
–
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled), CIOs =
V
SS
or V
CC
, Other input = 0 ~ V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
–1.0
1.0
μA
I
CC
Operating Power Supply Current
5
mA
I
CC1
s
Average Operating Current
1
2
mA
I
CC2
s
Average Operating Current
8
15
mA
V
OL
V
OH
Output Low Voltage
0.2
V
Output High Voltage
1.4
V
I
SB1
Standby Current (CMOS)
10
μA
V
IL
Input Low Voltage
–0.2
(Note 2)
0.4
V
V
IH
Input High Voltage
1.4
V
CC
+0.2
(Note 3)
V
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