參數(shù)資料
型號(hào): AM42BDS6408G
英文描述: 250NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
中文描述: Am42BDS6408G -堆疊式多芯片封裝(MCP)閃存和SRAM
文件頁數(shù): 39/73頁
文件大小: 1080K
代理商: AM42BDS6408G
38
Am42BDS6408G
November 1, 2002
P R E L I M I N A R Y
TEST CONDITIONS
Table 17.
Test Specifications
KEY TO SWITCHING WAVEFORMS
C
L
Device
Under
Test
Figure 8.
Test Setup
Test Condition
All speed
options
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–V
IO
V
Input timing measurement reference
levels
V
IO
/2
V
Output timing measurement
reference levels
V
IO
/2
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
V
IO
0.0 V
V
IO
/2
V
IO
/2
Output
Measurement Level
Input
Figure 9.
Input Waveforms and Measurement Levels
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