參數(shù)資料
型號: 28F1604C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器)
中文描述: 3伏高級堆疊芯片級封裝存儲器(3V的閃速存儲器和靜態(tài)存儲器)
文件頁數(shù): 45/64頁
文件大?。?/td> 927K
代理商: 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
39
Appendix A Program/Erase Flowcharts
Figure 15. Automated Word Programming Flowchart
Start
Write 40H
Program Address/Data
Read Status Register
SR.7 = 1
Full Status
Check if Desired
Program Complete
Read Status Register
Data (See Above)
V
PP
Range Error
Programming Error
Attempted Program to
Locked Block - Aborted
Program Successful
SR.3 =
SR.4 =
SR.1 =
FULL STATUS CHECK PROCEDURE
Bus Operation
Write
Write
Standby
Repeat for subsequent programming operations.
SR Full Status Check can be done after each program or after a sequence of
program operations.
Write FFH after the last program operation to reset device to read array mode.
Bus Operation
Standby
Standby
SR.3 MUST be cleared, if set during a program attempt, before further
attempts are allowed by the Write State Machine.
SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,
in cases where multiple bytes are programmed before full status is checked.
If an error is detected, clear the status register before attempting retry or other
error recovery.
No
Yes
1
0
1
0
1
0
Command
Program Setup
Program
Comments
Data = 40H
Data = Data to Program
Addr = Location to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = V
PP
Low Detect
Check SR.1
1 = Attempted Program to
Locked Block - Program
Aborted
Read
Status Register Data Toggle
CE# or OE# to Update Status
Register Data
Standby
Check SR.4
1 = V
PP
Program Error
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