參數(shù)資料
型號(hào)： 28F1604C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述： 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器）
文件頁數(shù)： 12/64頁
文件大?。?/td> 927K
代理商： 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
6
Preliminary
NOTES:
1. Two devices may not drive the memory bus at the same time.
2. Allowable flash read modes include read array, read query, read configuration, and read status.
3. Outputs are dependent on a separate device controlling bus outputs.
4. Modes of the flash and SRAM can be interleaved so that while one is disabled, the other controls outputs.
5. The SRAM may be placed into data retention mode by lowering the S-V
CC
to the V
DR
range, as specified.
6. SRAM is enabled and/or disabled with the logical function: S-CS
1
# OR S-CS
2
7. Simultaneous operations can exist, as long as the operations are interleaved such that only one device
attempts to control the bus outputs at a time.
2.1.2
Output Disable
With F-OE# and S-OE# inactive, the Stacked-CSP outputs are disabled output balls are placed in a
high
-
impedance state.
2.1.3
Standby
With F-CE# and S-CS
1
# or S-CS
2
inactive, the Stacked-CSP enters a standby mode, which
substantially reduces device power consumption. In standby, outputs are placed in a high-
impedance state independent of F-OE# and S-OE#. If the flash is deselected during a program or
erase operation, the flash continues to consume active power until the program or erase operation is
complete.
Table 3. Recommended Memory System Operating Mode Summary
Modes
Flash Signals
SRAM Signals
Memory Output
Notes
F
F
F
F
S
1
#
S
2
S
S
M
D
0
–
D
15
F
Read
H
L
L
H
SRAM must be in High Z
Flash
D
OUT
1,2,6
Write
H
L
H
L
Flash
D
IN
1,6
Standby
H
H
X
X
Any SRAM mode is allowable
Other
High Z
3,4
Output Disable
H
L
H
H
Other
High Z
3,4
Reset
L
X
X
X
Other
High Z
3,4
S
Read
FLASH must be in High Z
L
H
L
H
SRAM
D
OUT
1,6
Write
L
H
H
L
SRAM
D
IN
1,6
Standby
Any FLASH mode is allowable
H
X
X
X
Other
High Z
3,4,6
X
L
X
X
Output Disable
L
H
H
X
Other
High Z
3,4,6
Data Retention
same as a standby
Other
High Z
3,5,6
相關(guān)PDF資料
PDF描述
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
28F320S3 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160BJHE-BTLTH 制造商: 功能描述: 制造商:undefined 功能描述:
28F160C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
28F160C3BA90 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述:
28F160C3TD70 制造商: 功能描述: 制造商:undefined 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*