參數(shù)資料
型號(hào)： 28F1604C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述： 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 23/64頁(yè)
文件大?。?/td> 927K
代理商： 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
17
The 12 V F-V
PP
mode enhances programming performance during the short period of time
typically found in manufacturing processes; however, it is not intended for extended use. 12 V may
be applied to F-V
PP
during program and erase operations for a maximum of 1000 cycles on the
main blocks and 2500 cycles on the parameter blocks. F-V
PP
may be connected to 12 V for a total
of 80 hours maximum. Stressing the device beyond these limits may cause permanent damage.
3.9.2
F-V
PP
≤
V
PPLK
for Complete Protection
In addition to the flexible block locking, the F-V
PP
programming voltage can be held low for
absolute hardware write protection of all blocks in the flash device. When F-V
PP
is below V
PPLK
,
any program or erase operation will result in a error, prompting the corresponding status register bit
(SR.3) to be set.
4.0
Electrical Specifications
4.1
Absolute Maximum Ratings
NOTES:
1.
Minimum DC voltage is –0.5 V on input/output balls. During transitions, this level may undershoot to –2.0 V
for periods < 20 ns. Maximum DC voltage on input/output balls is F-V
CC
/ F-V
CCQ
/ S-V
CC
+ 0.5 V which,
during transitions, may overshoot to
F-V
CC
/ F-V
CCQ
/ S-V
CC
+ 2.0 V for periods < 20 ns.
2. Maximum DC voltage on F-V
PP
may overshoot to +14.0 V for periods < 20 ns.
3. Output shorted for no more than one second.
No more than one output shorted at a time.
4. F-V
PP
voltage is normally 1.65 V–3.3 V. Connection to supply of 11.4 V–12.6 V can only be done for 1000
cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase. F-V
PP
may be
connected to 12 V for a total of 80 hours maximum. See
Section 3.9.1
for details.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended
and extended exposure beyond the “Operating Conditions” may affect device reliability.
Parameter
Maximum Rating
Extended Operating Temperature
During Read
During Flash Block Erase and Program
Temperature under Bias
Storage Temperature
Voltage on Any Ball (except F-V
CC
/ S-V
CC
and F-V
PP
) with Respect to GND
F-V
PP
Voltage (for BLock Erase and Program) with Respect to GND
F-V
CC
/ F-V
CCQ
/ S-V
CC
Supply Voltage with Respect to GND
Output Short Circuit Current
–40°C to +85°C
–65°C to +125°C
–0.5 V to +3.3 V
(1)
–0.5 V to +13.5 V
(1,2,4)
–0.2V to +3.3 V
100 mA
(3)
NOTICE:
This datasheet contains information on products in full production. The specifications are subject to
change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a
design
.
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