參數(shù)資料
型號(hào): 28F1604C3
廠商: Intel Corp.
英文描述: 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述: 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器(3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
文件頁數(shù): 24/64頁
文件大?。?/td> 927K
代理商: 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
18
Preliminary
4.2
Operating Conditions
NOTES:
1. F-V
/F-V
CCQ
must share the same supply. F-V
CC
/S-V
CC
must share the same supply when not in data
retention.
2. Applying F-V
11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on
the main blocks and 2500 cycles on the parameter blocks. F-V
PP
may be connected to 12 V for a total of 80
hours maximum. See
Section 3.9.1
for details.
4.3
Capacitance
T
A
= +25°C, f = 1 MHz
NOTE:
1. Sampled, not 100% tested.
Table 9. Temperature and Voltage Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
T
A
V
CC
/ V
CCQ
V
PP1
V
PP2
Cycling
Operating Temperature
F-V
CC
/S-V
CC
Supply Voltage
Supply Voltage
–40
2.7
1.65
11.4
+85
3.3
3.3
12.6
°C
Volts
Volts
Volts
Cycles
1
1
1, 2
2
Block Erase Cycling
1,000,000
Sym
Parameter
Notes
Typ
Max
Units
Conditions
C
IN
Input Capacitance
1
16
18
pF
V
IN
= 0 V
C
OUT
Output Capacitance
1
20
22
pF
V
OUT
= 0 V
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