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參數(shù)資料
| 型號： | 28F1604C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 43/64頁 |
| 文件大小： | 927K |
| 代理商： | 28F1604C3 |
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28F1602C3, 28F1604C3, 28F3204C3
Preliminary
37
6.4.2
Simultaneous Bus Operations
Operations that require both the SRAM and Flash to be in active mode are disallowed. An example
of these cases would include simultaneous reads on both the flash and SRAM, which would result
in contention for the data bus. Finally, a read of one device while attempting to write to the other
(similar to the conditions of direct memory access (DMA) operation) are also not within the
recommended operating conditions. Basically, only one memory can drive the outputs out the
device at one given point in time.
6.5
Printed Circuit Board Notes
The Intel Stacked CSP will save significant space on your PCB by combining two chips into one
BGA style package. Intel Stacked CSP has a 0.8 mm pitch that can be routed on your Printed
Circuit Board with conventional design rules. Trace widths of 0.127 mm (0.005 inches) are typical.
Unused balls in the center of the package are not populated to further increase the routing options.
Standard surface mount process and equipment can be used for the Intel Stacked CSP.
NOTE:
Top View
6.6
System Design Notes Summary
The Advanced+ Boot Block Stacked CSP allows higher levels of memory component integration.
Different power supply configurations can be used within the system to achieve different
objectives. At least three different 0.1 μf capacitors should be used to decouple the devices within a
system. SRAM reads or writes during a flash program or erase are supported operations. Standard
printed circuit board technology can be used.
Figure 14. Standard PCB Design Rules Can be Used with Stacked CSP Device
Land Pad Diameter: 0.35 mm (0.0138 in)
Solder Mask Opening: 0.50 mm (0.0198 in)
Trace Width: 0.127 mm (0.005 in)
Trace Spaces: 0.160 mm (0.00625 in)
Via Capture Pad: 0.51 mm (0.020 in)
Via Drill Size: 0.25 mm (0.010 in)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F160C18 | 1.8V Advanced+ Boot Block Flash Memory(1.8V高級引導(dǎo)塊閃速存儲器) |
| 28F160C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
| 28F800C2 | 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器) |
| 28F160S3 | 3 V FlashFile Memory(3 V FlashFile 存儲器) |
| 28F320S3 | 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F160BJHE-BTLTH | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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