參數(shù)資料
型號(hào)： 28F1604C3
廠商： Intel Corp.
英文描述： 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器)
中文描述： 3伏高級(jí)堆疊芯片級(jí)封裝存儲(chǔ)器（3V的閃速存儲(chǔ)器和靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 27/64頁(yè)
文件大小： 927K
代理商： 28F1604C3
28F1602C3, 28F1604C3, 28F3204C3
Preliminary
21
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal F-V
/S-V
, T
= +25 °C.
2. I
and I
CCWS
are specified with device de-selected. If device is read while in erase suspend, current draw
is sum of I
CCES
and I
CCR
. If the device is read while in program suspend, current draw is the sum of I
CCWS
and I
.
3. Erase and Program are inhibited when F-V
PP
< V
PPLK
and not guaranteed outside the valid F-V
PP
ranges of
V
and V
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation (CMOS
inputs).
6. Applying F-V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on
the main blocks and 2500 cycles on the parameter blocks. F-V
PP
may be connected to 12 V for a total of 80
hours maximum. See
Section 3.9.1
for details.
DC Characteristics, Continued
Symbol
Parameter
Device
Note
2.7 V – 3.3 V
Unit
Test Conditions
Min
Max
V
IL
Input Low Voltage
Flash/
SRAM
–
0.2
0.6
V
V
IH
Input High Voltage
Flash/
SRAM
2.2
V
+0.2
V
V
OL
Output Low Voltage
Flash/
SRAM
7
–0.10
0.10
V
F-V
CC
/S-V
CC
= V
CC1
Min
I
OL
= 100
μ
A
V
OH
Output High Voltage
Flash/
SRAM
7
V
–
0.1
V
F-V
CC
/S-V
CC
= V
CC1
Min
I
OH
= –100
μ
A
V
PPLK
F-V
PP
Lock-Out Voltage
Flash
3
1.0
V
Complete Write Protection
V
PP1
F-V
PP
during Program / Erase
Flash
3
1.65
3.3
V
V
PP2
Operations
3,6
11.4
12.6
V
LKO
V
CC
Prog/Erase Lock Voltage
Flash
1.5
V
相關(guān)PDF資料
PDF描述
28F160C18 1.8V Advanced+ Boot Block Flash Memory(1.8V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F800C2 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
28F160S3 3 V FlashFile Memory(3 V FlashFile 存儲(chǔ)器)
28F320S3 3 V、32MB FlashFile Memory(3 V、32M位FlashFile 存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F160B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F160BJHE-BTLTH 制造商: 功能描述: 制造商:undefined 功能描述:
28F160C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory
28F160C3BA90 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述:
28F160C3TD70 制造商: 功能描述: 制造商:undefined 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*