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參數(shù)資料
| 型號： | 28F1604C3 |
| 廠商： | Intel Corp. |
| 英文描述： | 3 Volt Advanced+ Stacked Chip Scale Package Memory(3V閃速存儲器和靜態(tài)存儲器) |
| 中文描述： | 3伏高級堆疊芯片級封裝存儲器（3V的閃速存儲器和靜態(tài)存儲器） |
| 文件頁數(shù)： | 15/64頁 |
| 文件大?。?/td> | 927K |
| 代理商： | 28F1604C3 |
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28F1602C3, 28F1604C3, 28F3204C3
Preliminary
9
status register before beginning another command or sequence. Note that the Read Array command
must be issued before data can be read from the memory array. Resetting the device also clears the
status register.
3.4
Read Query (98H)
The read query mode outputs Common Flash Interface (CFI) data when the device is read. This can
be accessed by writing the Read Query Command (98H). The CFI data structure contains
information such as block size, density, command set and electrical specifications. Once in this
mode, read cycles from addresses shown in Appendix B retrieve the specified information. To
return to read array mode, write the Read Array command (FFH).
3.5
Word Program (40H/10H)
Programming is executed using a two
-
write sequence. The Program Setup command (40H) is
written to the CUI followed by a second write which specifies the address and data to be
programmed. The WSM will execute a sequence of internally timed events to program desired bits
of the addressed location, then verify the bits are sufficiently programmed. Programming the
memory results in specific bits within an address location being changed to a “0.” If the user
attempts to program “1”s, the memory cell contents do not change and no error occurs.
The status register indicates programming status: while the program sequence executes, status bit 7
is “0.” The status register can be polled by toggling either F-CE# or F-OE#. While programming,
the only valid commands are Read Status Register, Program Suspend, and Program Resume.
When programming is complete, the program status bits should be checked. If the programming
operation was unsuccessful, bit SR.4 of the status register is set to indicate a program failure. If
SR.3 is set then F-V
PP
was not within acceptable limits, and the WSM did not execute the program
command. If SR.1 is set, a program operation was attempted on a locked block and the operation
was aborted.
The status register should be cleared before attempting the next operation. Any CUI instruction can
follow after programming is completed; however, to prevent inadvertent status register reads, be
sure to reset the CUI to read array mode.
3.5.1
Suspending and Resuming Program (B0H/D0H)
The Program Suspend command halts an in
-
progress program operation so that data can be read
from other locations of memory. Once the programming process starts, writing the Program
Suspend command to the CUI requests that the WSM suspend the program sequence (at
predetermined points in the program algorithm). The device continues to output status register data
after the Program Suspend command is written. Polling status register bits SR.7 and SR.2 will
determine when the program operation has been suspended (both will be set to “1”). t
WHRH1
/
t
EHRH1
specify the program suspend latency.
A Read Array command can be written to the CUI to read data from any block other than the
suspended block. The only other valid commands, while program is suspended, are Read Status
Register, Read Configuration, Read Query, and Program Resume. After the Program Resume
command is written to the flash memory, the WSM will continue with the programming process
and status register bits SR.2 and SR.7 will automatically be cleared. The device automatically
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 28F160B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
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| 28F160C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel Advanced+ Boot Block Flash Memory |
| 28F160C3BA90 | 制造商: 功能描述: 制造商:Intel 功能描述: 制造商:undefined 功能描述: |
| 28F160C3TD70 | 制造商: 功能描述: 制造商:undefined 功能描述: |
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