
Document : 1G5-0127
Rev2
Page 70
VIS
Preliminary VG36641641BT
CMOS Synchronous Dynamic RAM
1. CONTROLLING DIMENSION : MILLIMETERS
2. MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
3. ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
NOTE:
22.09
11.56
10.03
R1
R1
ZD
ZD
E1
E1
L
L
R
R
E
E
e
e
c
c
c1
D
D
c1
b1
b1
b
b
A
A
A1
A1
A2
A2
DIM
---
---
---
---
---
---
---
---
0.12
0.005
0.012
0.012
0.005
0.005
0.870
0.455
0.016
0.005
0.395
0.71 REF.
0.80 BASIC
10.16
0.40
0.12
0.50
---
---
11.76
10.29
0.25
0.60
11.96
---
---
---
0.12
0.12
22.22
---
0.30
0.30
---
---
---
---
0.21
22.35
0.16
0.45
0.40
0.028 REF.
0.400
0.020
---
---
0.463
0.0315 BASIC
0.405
0.024
0.010
0.471
---
---
---
0.875
---
---
---
---
---
0.008
0.880
0.006
0.016
0.018
MIN.
0.002
0.037
MILLIMETERS
---
---
---
---
---
0.05
0.95
---
1.00
MIN.
NOM.
1.20
0.15
1.05
MAX.
---
---
---
---
---
0.039
---
INCHES
NOM.
0.047
0.006
0.041
MAX.
A
A
b
b
0.100(0.004")
e
e
E
E
SEATING PLANE
28
28
27
27
D
D
ZD
ZD
1
1
54
54
c
c
B
B
RAD R
A2
A2
A1
A1
E1
E1
DETAIL A
DETAIL A
B
B
L
L
0¢X~5¢X
RAD R1
c1
c1
c
c
BASE METAL
WITH PLATING
SECTION B-B
b1
b1
b
b
Ordering information
VG36648041BT-8
VG
36
64
16
4
1
B
T
8
Packaging Information
400mil, 54-Pin Plastic TSOP
Part Number
Cycle time
Package
VG36646141BT-7
7ns
400mil
54-Pin
Plastic TSOP
VG36646141BT-8
8ns
VG36646141BT-10
10ns
VIS Memory Product
Technology/Design Rule
64Mb
Device Configuration, 16: x4
Device Infernal Banks
Interface Type, 1: LVTTL
Mask/Design Version
Package Type, T: TSOP
Cycle time, 10: 10ns, 8: 8ns, 7: 7ns