- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361731 > VG36648041BT-8H x8 SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | VG36648041BT-8H |
| 英文描述： | x8 SDRAM |
| 中文描述： | x8 SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 1/73頁(yè) |
| 文件大?。?/td> | 1537K |
| 代理商： | VG36648041BT-8H |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)
Document :1G5-0152
Rev.3
Page 1
VIS
VG36644041BT / VG36648041BT / VG36641641BT
CMOS Synchronous Dynamic RAM
Description
The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks,
2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with
an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It
is packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
Single 3.3V (
) power supply
High speed clock cycle time : 6 / 7 / 8 only for x16 organization
7L / 8H only for x4 / x8 organization
PC100(8H), PC133(7L)
Fully synchronous with all signals referenced to a positive clock edge
Programmable CAS Iatency (2, 3)
Programmable burst length (1, 2, 4, 8 & Full page)
Programmable wrap sequence (Sequential/Interleave)
Automatic precharge and controlled precharge
Auto refresh and self refresh modes
Quad Internal banks controlled by A12 & A13 (Bank Select)
Each Bank can operate simultaneously and independently
LVTTL compatible I/O interface
Random column access in every cycle
X4 / X8 / X16 organization
Input/Output controlled by DQM(X4 / X8) ,LDQM and UDQM(X16)
4,096 refresh cycles/64ms
Burst termination by burst stop and precharge command
Burst read/single write option
0.3V
±
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VG36648041BT-8L | x8 SDRAM |
| VG37648041AT | 256M:x4, x8, x16 CMOS Synchronous Dynamic RAM |
| VG4616322BQ-5 | 262,144x32x2-Bit CMOS Synchronous Graphic RAM |
| VG4616322BQ-5R | 262,144x32x2-Bit CMOS Synchronous Graphic RAM |
| VG4616322BQ-6 | 262,144x32x2-Bit CMOS Synchronous Graphic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VG36648041BT-8L | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SDRAM |
| VG36648041CT | 制造商:VML 制造商全稱(chēng):VML 功能描述:CMOS Synchronous Dynamic RAM |
| VG36648041DT | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:CMOS Synchronous Dynamic RAM |
| VG36648041DT-6 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:CMOS Synchronous Dynamic RAM |
| VG36648041DT-7 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:CMOS Synchronous Dynamic RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。