參數(shù)資料
型號： VG36646141BT-8
廠商： Vanguard International Semiconductor Corporation
英文描述： CMOS Synchronous Dynamic RAM
中文描述： 同步動(dòng)態(tài)隨機(jī)存儲器的CMOS
文件頁數(shù)： 4/70頁
文件大?。?/td> 974K
代理商： VG36646141BT-8
Document : 1G5-0127
Rev2
Page 4
VIS
Preliminary VG36641641BT
CMOS Synchronous Dynamic RAM
Absolute Maximum D.C. Ratings
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
peumanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Parameter
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
I
OUT
P
D
T
OPT
T
STG
Value
Unit
V
Voltage on any pin relative to Vss
-0.5 to + 4.6
Supply voltage relative to Vss
-0.5 to + 4.6
V
Short circuit output current
50
mA
Power dissipation
1.0
W
Operating temperature
0 to + 70
°C
Storage temperature
-55 to + 125
°C
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Input High Voltage
Symbol
V
IH
V
IL
Min
2.0
Max
Unit
V
Notes
2
V
DDQ
+ 2.0
0.8
Input Low Voltage
V
SSQ
-2.0
V
2
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Supply Voltage
Symbol
V
DD,
V
DDQ
V
IH
V
IL
Min
3.0
Typ
3.3
Max
3.6
Unit
V
Input High Voltage, all inputs
2.0
-
V
DD
+ 0.3
0.8
V
Input Low Voltage, all inputs
-0.3
-
V
Capacitance
(Ta = 25°C, f = 1MHZ)
Notes : 1. Capacitance measured with effective capacitance measuring method.
2. The overshoot and undershoot voltage duration is
3ns with no input clamp diodes.
Parameter
Symbol
C
in
C
CLK
C
I/O
Min
2.5
Typ
3.75
Max
5.0
Unit
pF
Notes
1
Input capacitance (All input pins except CLK pin)
CLK pin
2.5
3.25
4.0
pF
1
Data input/output capacitance
4.0
5.25
6.5
pF
1
≤
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