參數(shù)資料
型號(hào): E28F320J5-120
廠商: INTEL CORP
元件分類: PROM
英文描述: StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
中文描述: 2M X 16 FLASH 5V PROM, 150 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁數(shù): 44/51頁
文件大?。?/td> 651K
代理商: E28F320J5-120
28F320J5 and 28F640J5
Datasheet
49
6.7
Block Erase, Program, and Lock-Bit Configuration
Performance(1,2)
NOTES:
1. These performance numbers are valid for all speed versions.
2. Sampled but not 100% tested.
3. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (tWHQV1,tEHQV1) is 6.8 s/byte (typical).
7. Effective per-word program time (tWHQV2,tEHQV2) is 13.6 s/byte (typical).
#Sym
Parameter
Notes
Typ(3)
Max
Unit
W16
Write Buffer Program Time
4,5,6,7
218
654
s
W16
tWHQV3
tEHQV3
Byte Program Time (Using Word/Byte Program Command)
4
210
630
s
Block Program Time (Using Write to Buffer Command)
4
0.8
2.4
sec
W16
tWHQV4
tEHQV4
Block Erase Time
4
1.0
5.0
sec
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
4
64
75
s
W16
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
4
.50
7.0
sec
W16
tWHRH
tEHRH
Erase Suspend Latency Time to Read
26
35
s
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