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參數(shù)資料
| 型號(hào)： | E28F320J5-120 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
| 中文描述： | 2M X 16 FLASH 5V PROM, 150 ns, PDSO56 |
| 封裝： | 14 X 20 MM, TSOP-56 |
| 文件頁數(shù)： | 16/51頁 |
| 文件大?。?/td> | 651K |
| 代理商： | E28F320J5-120 |
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28F320J5 and 28F640J5
Datasheet
23
4.2.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
4.2.7
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific Extended Query
table specifies this and other similar information.
Table 11. Device Geometry Definition
Offset
Length
Description
Code See Table
Below
27h
1
“n” such that device size = 2n in number of bytes
27:
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
29:
--00
2Ah
2
“n” such that maximum number of bytes in write buffer = 2n
2A:
--05
32
2B:
--00
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blockingregion
4. Partition size = (total blocks) x (individual block size)
2C:
--01
1
2Dh
4
Erase Block Region 1 Information
2D:
bits 0–15 = y, y+1 = number of identical-size erase blocks
2E:
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2F:
30:
Table 12. Device Geometry Definition
Address
32 Mbit
64 Mbit
128 Mbit
(Info Only
27:
--16
--17
--18
28:
--02
29:
--00
2A:
--05
2B:
--00
2C:
--01
2D:
--1F
--3F
--7F
2E:
--00
2F:
--00
30:
--02
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| E28F400BX-B120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-B60 | ACTUATOR, SWITCH, ROUND, MOMENTARY; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:1000000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes |
| E28F400BX-B80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F400BX-T120 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| E28F004BX-T120 | OSC 5V SMT PLAS 14X9 CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| E28F320J5A-120 | 制造商:Intel 功能描述: |
| E28F320S5-110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| E28F320S5-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| E28F400B5B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| E28F400B5B80 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述: |
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